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| P Channel Enhancement Mode MOSFET ST7407 -3.4A DESCRIPTION The ST7407 is the P-Channel logic enhancement mode power field effect transistors It is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-323 (SC-70) FEATURE -20V/-3.4A, RDS(ON) = 100m-ohm @VGS = -4.5V -20V/-2.4A, RDS(ON) = 125m-ohm @VGS = -2.5V -20V/-1.8A, RDS(ON) = 170m-ohm @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-323 (SC-70) package design 3 D G 1 1.Gate 2.Source S 2 3.Drain PART MARKING SOT-323 (SC-70) 3 07YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number ST7407S32RG Package SOT-323 Part Marking 07YA Process Code : A ~ Z ; a ~ z ST7407S32RG S32 : SOT-323 ; R : Tape Reel ; G : Pb - Free 1 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST7407 2006. V1 P Channel Enhancement Mode MOSFET ST7407 -3.4A ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=70 TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical -20 12 -2.3 -1.7 -6 -1.4 0.35 0.22 150 -55/150 120 Unit V V A A A W /W 2 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST7407 2006. V1 P Channel Enhancement Mode MOSFET ST7407 -3.4A ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Condition Min Typ Max Unit V(BR)DSS VGS(th) IGSS IDSS VGS=0V,ID=-250uA VDS=VGS,ID=-250uA VDS=0V,VGS=12V VDS=-20V,VGS=0V VDS=-20V,VGS=0V TJ=55 VDS-5V,VGS=-4.5V VDS-5V,VGS=-2.5V VGS=-4.5V,ID=-3.4A VGS=-2.5V,ID=-2.4A VGS=-1.8V,ID=-1.8A VDS=-5V,ID=-2.8V IS=-1.6A,VGS=0V -20 -0.35 V -0.8 100 -1 -5.0 uA A 0.090 0.100 0.115 0.125 0.150 0.170 V nA ID(on) RDS(on) gfs VSD -6 -3 S V 6.0 -0.8 -1.2 Qg Qgs Qgd Ciss Coss Crss td(on) tr VDS=-6V VGS=-4.5V ID-2.8A VDS=-6.0V VGS=0V F=1MHz VDD=-6V RL=6 ID=-1.0A VGEN=-4.5V RG=6 4.8 1.0 1.0 485 85 40 10 13 18 15 8.0 nC pF 16 23 25 20 nS td(off) tf 3 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST7407 2006. V1 P Channel Enhancement Mode MOSFET ST7407 -3.4A TYPICAL CHARACTERICTICS (25 Unless noted) 4 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST7407 2006. V1 P Channel Enhancement Mode MOSFET ST7407 -3.4A TYPICAL CHARACTERICTICS (25 Unless noted) 5 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST7407 2006. V1 P Channel Enhancement Mode MOSFET ST7407 -3.4A 6 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST7407 2006. V1 P Channel Enhancement Mode MOSFET ST7407 -3.4A SOT-323 (SC-70) PACKAGE OUTLINE 7 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST7407 2006. V1 |
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